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CVD

Chemical Vapor Deposition (CVD) processes are the target of more than 99% of DOCK/ products. It is a method to deposit high-quality films of various materials. CVD can be classified into many different types for special operating conditions. Just to name a few, below are some special cases mentioned.

PECVD

Thermal budget is critical to consider for today’s device applications. Employing a plasma during the CVD process aids precursor decomposition, allowing processes with reduced temperature.

MOVPE

Metalorganic Vapor Phase Epitaxy (MOVPE) is mainly applied for the growth of III/V semiconductors. Metalorganic precursors are exposed to a crystalline substrate allowing defining very precise interfaces and hence, complex device structures.

HVPE

Hydride Vapor Phase Epitaxy (HVPE) is an epitaxial growth technique often employed to deposit various semiconductors. DOCK/ offers a wide range of group-III and -V chlorides that can be used for such applications. Instead of using HCl reacting with the metal to produce the chlorides in the reactor, such chlorides are available through DOCK/ readily packaged in appropriate containers/bubblers. For very corrosive chlorides we do also offer special alloy materials such as Hastelloy.

ALD

Atomic Layer Deposition technology is known for decades but has gathered increasing interest in application over the last years. It offers unique pathways for solutions to deposition challenges and finds its way into more and more applications and semiconductor devices. This is due to the self-limiting nature of the process and the vast number of possible materials, which leaves ALD as an essential technique in today’s microelectronics.

Our offering spans from “standard” ALD precursors to new molecules. If your desired element or molecule is not on the list, please get in touch with us. We are happy to provide custom solutions for your particular demands or desired processes for a new generation of devices.

Legend Materials

Group IV

Si and SiGe Epi is the basis for all modern device architecture and numerous different and innovative molecules are either in use or getting explored for next-generation devices.

II/VI Semiconductors

II/VI semiconductor compounds typically exhibit large bandgaps, making them popular for short-wavelength optoelectronics. The main application are infrared detectors. However, a thin-film solar cell application is also investigated. DOCK/ is offering a complete list of precursors for these applications.

II/VI Dopants

DOCK/ has a special focus on dopant materials, offering not only a wide range of elements but also the element in various ligand modifications.

III/V Semiconductors

III/V semiconductors have been the basis of DOCK/’s business since its foundation in the early 90′ of the last century. Especially our offering of metalorganic group-V precursors and the EPIGRADE quality standard is unique. Besides all standard precursors also novel precursor developments are a key strategy enabling new metastable material systems but also the integration of III/V semiconductors on Silicon. III/V semiconductors are widely applied in today’s optoelectronic devices, such as GaAs/(Al,Ga)As or (Ga,In)(P,As)/InP for VECSELs, multijunction solar cells, GaAs or InP transistors and infrared detectors.

We deliver high-purity precursors that guarantee outstanding performance of your devices.

III/V Dopants

High purity and the right molecule are key to the highest device performance. DOCK/ takes special care in DOPANT synthesis, purification, and novel precursor development. There is a vast number of dopants with varying ligand modifications available and we are happy to discuss this essential choice with you.

2D

Two Dimensional (2D) materials are crystalline materials consisting of a single layer of atoms. In recent years 2D materials such as transition metal dichalcogenides (TMDCs) gained a lot of attention. They offer great potential for the application in optical, electronical, and energy storage devices and many more. MOCVD is superior for reproducible growth. Dock/ offers among others Mo, W, S, Se, and Te compounds, but is always looking for new challenges and joint projects.

Nitrides

Nitrides are an essential class of materials used in today’s microelectronics and optoelectronic devices. Particularly, blue LEDs would have been impossible without the compound semiconductor GaN (Noble Prize 2014).

Oxides

Oxides are attractive materials that can be used as a passivation layer, an insulation layer, or even as a thin conductive electrode (Transparent Conductive Oxide). DOCK/ offers many different element precursors with varying ligand configurations to meet your demands.

Legend Grade

EG – Electronic Grade

Electronic Grade is the choice for all applications in electronics. A special focus lies on metal impurities and specifying ppb impurity levels.

DG – Development Grade

The development of new precursors is a challenging task. Newly developed precursors offered for the first time to interested customers are typically in DG. Here, together with our clients, a most critical impurity list is the basis for the specification.

PG – Pure Grade

This grade is an intermediate between DG and EG. The list of elements specified is reduced and the purity level, in general, is meeting less stringent demands.

OEG – Optoelectronic Grade

The basis for OEG is EG, but in optoelectronics there is an inherent demand for the lowest oxygen levels. For this grade extreme care is given to keep oxygen levels to the absolute minimum and makes this grade the choice for all optoelectronic applications

EPI – Epitaxy Grade

All batches specified through this robust quality management have been tested by the application. A set of reference layers is grown and the semiconductor structures are analyzed by various methods giving first-hand feedback on the performance of the precursors. EPI is the non-plus ultra grade for III/V precursors and the true semiconductors decision