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2D

Two Dimensional Materials are crystalline materials consisting of a single layer of atoms. Applications do widely range, among others in photovoltaics and semiconductor. DOCK/ offers among others Mo, W, S, Se and Te compounds, but is always looking for new challenges and joint projects.

ALD

Atomic Layer Deposition technology is known since decades but has gathered increasing interest in applicationover the last years. It offers uniques pathways for solutions of deposition problems and finds ist way into more and more applications and semiconductor devices. Our offeringspans from “standard” ALD precursors to new molecules. If the your element or molecule is not on the list, please get in touch with us.

CVD

Chemical Vapor Deposition processes are the target of more than 99% of DOCK/ products.

HVPE

Hydride vapour phase epitaxy is an epitaxial growth technique often employed to deposit various semiconductors. DOCK/ offers a wide range of group-III and -V chlorides which can be used for such appliactions. Instead of using HCl reacting with the metal to produce the chlorides in the reactor, such chlorides are available through DOCK/ readily packaged in appropriate containers/bubblers. For very corrosive chlorideswe do also offer special alloy materials like Hastelloy.

II/VI II/VI

semiconductor compounds typically exhibit large bandgaps, making them popular for short wavelength optoelectronics. DOCK/ is offering a complete list of precursors for this application.

II/VI DOPANT

DOCK/ has a special focus on dopant materials, offering not only a wide range of elements, but also the element in various ligand modifications

III/V

III/V semiconductors have been the basis of DOCK/’s business since the foundation in the early 90′ of last century. Especially our offering of metalorganic group-V precursors and the EPIGRADE quality standard is unique.Beside all standard precursors also novel precursor developments are key strategy enabling new metabstable materialsystems but also the integration of III/V semiconductors on Silicon.
III/V DOPANT High purity and the right molecule are key to highest device performance.DOCK/ takes special care in DOPANT synthesis, purification and novel precursor development.

III/V ETCH

Selective area growth is an important method in advanced device manufacturing. DOCK/ offers mild etching alternatives to the standard gases in use.

IV EPI

Si and SiGe Epi is the basis for all modern device architecture and nomuerous different and innovative molecules are either in use or getting explored for next generation devices.

IV EPI DOPANT

Advanced doping of SiGe is attracting increasing interest not only from academic point of view but also from industry. Key is finding an optimal ligand structure for the desired molecule, having decomposition characteristics, parastic effects and doping efficiency in view. DOCK/ is very active in JDP’s on novel dopant molecules for next generation devices.

EG – Electronic Grade

Is the choice for all applications in electronics. Special focus lies on metal impurities and specifying ppb levels

DG – Development Grade

Development of new precursors is challenging task. Precursors offered first to interested customers are offered typically in DG. Here together with our clients a most crititical impurity list is basis for the specification.

OEG – Opto Electronic Grade

The basis for OEG is EG, but in optoelectronics there is inherent demand for lowest oxygen levels. For this grade extreme care is given to keep oxygen levels to the absolute minimum and makes this grade the choice for all optoelectronic applications

EPI – Epitaxy Grade

All batches specified through this robust quality management have been tested by the appliaction. A set of reference layers is deposited and the semiconductor structures are analyzed by various methods giving first hand feedback on the performance of the precursors. EPI is the non plus ultra grade for III/V precursors and truly semiconductors decision

ALD – Atomic Layer Deposition Grade

The purity of the precursors is here precisely designed to meet the demands of ALD processes.

TCO – Transparent Conductive Oxide Grade

Transparent conductive oxides are applied in various applications. The purity is specifically aligned with these requirements.

Neat – non purified grade

Some application just require the neat product, but packaged in semiconductor like packaging. DOCK/ neat grade is meeting this customer demand

PG – Pure Grade

This grad is an intermediate between DG and EG. The list of elements specified is reducedand purity level in general is meeting less stringent demands

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