Two Dimensional Materials are crystalline materials consisting of a single layer of atoms. Applications do widely range, among others in photovoltaics and semiconductor. DOCK/ offers among others Mo, W, S, Se and Te compounds, but is always looking for new challenges and joint projects.
Atomic Layer Deposition technology is known since decades but has gathered increasing interest in applicationover the last years. It offers uniques pathways for solutions of deposition problems and finds ist way into more and more applications and semiconductor devices. Our offeringspans from “standard” ALD precursors to new molecules. If the your element or molecule is not on the list, please get in touch with us.
Chemical Vapor Deposition processes are the target of more than 99% of DOCK/ products.
Hydride vapour phase epitaxy is an epitaxial growth technique often employed to deposit various semiconductors. DOCK/ offers a wide range of group-III and -V chlorides which can be used for such appliactions. Instead of using HCl reacting with the metal to produce the chlorides in the reactor, such chlorides are available through DOCK/ readily packaged in appropriate containers/bubblers. For very corrosive chlorideswe do also offer special alloy materials like Hastelloy.
semiconductor compounds typically exhibit large bandgaps, making them popular for short wavelength optoelectronics. DOCK/ is offering a complete list of precursors for this application.
DOCK/ has a special focus on dopant materials, offering not only a wide range of elements, but also the element in various ligand modifications
III/V semiconductors have been the basis of DOCK/’s business since the foundation in the early 90′ of last century. Especially our offering of metalorganic group-V precursors and the EPIGRADE quality standard is unique.Beside all standard precursors also novel precursor developments are key strategy enabling new metabstable materialsystems but also the integration of III/V semiconductors on Silicon.
III/V DOPANT High purity and the right molecule are key to highest device performance.DOCK/ takes special care in DOPANT synthesis, purification and novel precursor development.
Selective area growth is an important method in advanced device manufacturing. DOCK/ offers mild etching alternatives to the standard gases in use.
Si and SiGe Epi is the basis for all modern device architecture and nomuerous different and innovative molecules are either in use or getting explored for next generation devices.
IV EPI DOPANT
Advanced doping of SiGe is attracting increasing interest not only from academic point of view but also from industry. Key is finding an optimal ligand structure for the desired molecule, having decomposition characteristics, parastic effects and doping efficiency in view. DOCK/ is very active in JDP’s on novel dopant molecules for next generation devices.