High Performance Process Chemicals for CVD Applications

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MOCVD Precursors Overview »

By DockChemicals

Chemicals for CVD Applications
Precisely designed to your process

The DOCK/CHEMICALS Solutions include a wide range of process chemicals for CVD applications. Please find an extraction below. If you’re looking for a special solution, don’t hesitate to contact us.

MOCVD Precursors III/V – Compounds

TBAs
TMAs
DETBAs
Tertiarybutylarsine (» PDF)
Trimethylarsine
Diethyltertiarybutylarsine

TBP
DETBUP
Tertiarybutylphosphine (» PDF)
Ditertiarybutylphosphine

N – Hydrazines
TBHy
UDMHy
Tertiarybutylhydrazine
Dimethylhydrazine

Sb – Antimonides
TMSb
TESb
Trimethylantimony
Triethylantimony

Bi – Bismuth
TMBi
Trimethylbismuth

B – Boron
TEB
TTBB
Triethylboron
Tritertiarybutylboron

Al – Aluminium  
TMAl
TTBAl
Trimethylaluminum
Tris(tertiarybutyl)aluminium

Ga – Gallium
TMGa
TEGa
TTBGa
Trimethylgallium
Triethylgallium
Tritertiarybutylgallium

In – Indium
TMIn
DADI
Trimethylindium
Dimethylaminopropyl-dimethyl-indium

MOCVD Precursors II/VI – Compounds

S – Sulphides
DTBS
Ditertiarybutylsulphide

Se – Selenides
DiPSe
Diisopropylselenide

Cd – Cadmium
DMCd
Dimethylcadmium

MOCVD Precursors Dopants

C – Carbon
CTBr
CCl3Br
Carbontetrabromide
Carbontribromidechloride

Si – Silane 
DTBSi
Ditertiarybutylsilane

Fe – Iron
CP2Fe
Ferrocene

Zn – Zinc
DMZn
DEZn
Dimethylzinc
Diethylzinc

Te – Tellurium
DETe
Diethyltellurium

MOCVD Precursors Etching Materials

Cl – Chlorine
TBCl
Tertiarybutylchloride