GaP current spreading layer grown at ultra low temperature using TBP
GaP is widely used as current spreading layer (CSL) for red/amber light emitting diodes (LED). If deposited by Metalorganic Vapor Phase Epitaxy (MOVPE) using Phosphine (PH3) as group-V precursor high growth temperatures are required. This thermal stress causes problems to the doping profiles because of diffusion and prohibits device designs of steeper doping profiles. TBP enables a much lower growth temperature regime. We have realized high quality GaP growth at deposition temperatures as low as 400°C exhibiting p-doping levels in the 10E18cm-3 range. Please contact a DOCK/CHEMICALS representative for further information.